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Perovskite oxides have a wide variety of physical properties that make them promising candidates for versatile technological applications including nonvolatile memory and logic devices. Chemical tuning of those properties has been achieved, to the greatest extent, by cation-site substitution, while anion substitution is much less explored due to the difficulty in synthesizing high-quality, mixed-anion compounds. Here, nitrogen-incorporated BaTiO₃thin films have been synthesized by reactive pulsed-laser deposition in a nitrogen growth atmosphere. The enhanced hybridization between titanium and nitrogen induces a large ferroelectric polarization of 70 μC/cm²and high Curie temperature of ~1213 K, which are ~2.8 times larger and ~810 K higher than in bulk BaTiO₃, respectively. These results suggest great potential for anion-substituted perovskite oxides in producing emergent functionalities and device applications. 

Gyroid structure, a nature inspired cellular architecture, is under extensive exploration recently due to its structure continuity, uniform stress distribution under compression, and stable collapse mechanism during deformation. However, when combining with a functional gradient, the Gyroid structure can perform much different mechanical behavior from its homogeneous counterpart. Herein, bottom-up computational modeling is performed to investigate the mechanics of functional gradient nano-gyroid structure made of copper (Cu). Our work reveals that its mechanical properties degrade with a density that is much slower than those of homogeneous gyroid structure. The scaling of yield strength [Formula: see text] to the relative density [Formula: see text] for the functional gradient gyroid structure is in the factor of 1.5. Moreover, the layer-by-layer collapsing mechanism yields significantly better mechanical energy absorption ability. This study not only leads to insightful understanding of the deformation mechanisms in nonuniform gyroid structures but also promotes the development of the functional gradient cellular materials. 

Abstract Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high‐density nonvolatile memories as well as future energy‐efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high‐quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.